Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz
P Sarafis, AG Nassiopoulou - Nanoscale research letters, 2014 - Springer
In this work, the dielectric properties of porous Si for its use as a local substrate material for
the integration on the Si wafer of millimeter-wave devices were investigated in the frequency …
the integration on the Si wafer of millimeter-wave devices were investigated in the frequency …
Post-process porous silicon for 5G applications
The interest of 5G in centimeter and millimeter waves relies on large blocks of available
spectra and thus increased bandwidth. At these frequencies, the dielectric and conductive …
spectra and thus increased bandwidth. At these frequencies, the dielectric and conductive …
Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices
P Sarafis, E Hourdakis… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Dielectric permittivity of porous Si (PSi) layers formed on a low-resistivity p-type Si (0.001-
0.005 Ω. cm) is thoroughly investigated using analytical expressions within the frame of …
0.005 Ω. cm) is thoroughly investigated using analytical expressions within the frame of …
Beyond-CMOS Nanodevices 1
F Balestra - 2014 - books.google.com
This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS
nanodevices for developing novel functionalities, logic and memories dedicated to …
nanodevices for developing novel functionalities, logic and memories dedicated to …
Small-and large-signal performance up to 175° C of low-cost porous silicon substrate for RF applications
This paper focuses on the comparison of the RF performances of various advanced trap-rich
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
Hybrid precoding with time-modulated arrays for mmwave MIMO systems
JP González-Coma, R Maneiro-Catoira… - IEEE Access, 2018 - ieeexplore.ieee.org
We consider the utilization of time-modulated arrays (TMAs) as a simple and cost-effective
approach to hybrid digital–analog precoding in millimeter wave (mmWave) multiple-input …
approach to hybrid digital–analog precoding in millimeter wave (mmWave) multiple-input …
Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of …
P Sarafis, AG Nassiopoulou - Applied Physics Reviews, 2017 - pubs.aip.org
The increasing need for miniaturization, reliability, and cost efficiency in modern
telecommunications has boosted the idea of system-on-chip integration, incorporating the …
telecommunications has boosted the idea of system-on-chip integration, incorporating the …
Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si
In this work, two novel RF substrate technologies are compared, namely local porous Si RF
substrate technology and high resistivity Si with a trap-rich layer on top (trap-rich HR-Si) …
substrate technology and high resistivity Si with a trap-rich layer on top (trap-rich HR-Si) …
High-performance on-chip low-pass filters using CPW and slow-wave-CPW transmission lines on porous silicon
We report on the design, fabrication, and characterization of high-performance stepped-
impedance filters (SIFs) on a locally formed porous Si layer on the CMOS Si wafer. This …
impedance filters (SIFs) on a locally formed porous Si layer on the CMOS Si wafer. This …
High-performance MIM capacitors with nanomodulated electrode surface
E Hourdakis, A Travlos… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
We report on a high-performance metal-insulator-metal (MIM) capacitor using a barrier-type
anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with …
anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with …