Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
[HTML][HTML] Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, S Ganschow, P Seyidov, K Irmscher… - Applied Physics …, 2022 - pubs.aip.org
Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S Bin Anooz, R Grüneberg, C Wouters… - Applied Physics …, 2020 - pubs.aip.org
Homoepitaxial (100) β-Ga 2 O 3 films were grown on substrates with miscut angles of 2, 4,
and 6 toward [00 1] by metal organic vapor phase epitaxy. Step-flow growth mode, resulting …
and 6 toward [00 1] by metal organic vapor phase epitaxy. Step-flow growth mode, resulting …