Direct-Write Technologies covers applications, materials, and the techniques in using direct-
write technologies. This book provides an overview of the different direct write techniques …

Pulsed radiation of CO 2 laser has been used to produce an optical breakdown on a silicon
target in atmospheric air. After several breakdown initiations near the threshold of plasma …

Two different mechanisms of laser-induced treatment of silicon in atmospheric air are
compared. In one, silicon target was ablated by pulsed UV radiation, which led to a …

Nanocrystalline silicon (nc-Si) was fabricated by KrF excimer laser annealing of
hydrogenated amorphous silicon/amorphous-SiNx: H superlattices. A stable and …

С применением методик комбинационного рассеяния света установлено, что в пленках
аморфного кремния при наносекундных воздействиях ультрафиолетового лазерного …

A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus
doped hydrogenated amorphous silicon (a-Si: H) film was annealed by cw Ar+ laser …

The optoelectronic properties of undoped and doped microcrystalline silicon carbide thin
films, prepared by excimer (ArF) laser crystallisation of plasma enhanced chemical vapour …

Using Raman scattering, it was ascertained that silicon nanocrystals with sizes exceeding 2
nm are formed in amorphous silicon films exposed to nanosecond ultraviolet laser radiation …

The plasma produced in trisilane (Si 3 H 8) at room temperature and pressures ranging from
50 to 10 3 Pa by laser-induced breakdown (LIB) has been investigated. The ultraviolet …

We present time-resolved reflectivity, photoluminescence, dark conductivity and morphology
studies of light-emitting Si prepared by pulsed XeCl laser irradiation of amorphous …