Challenges and applications of emerging nonvolatile memory devices
W Banerjee - Electronics, 2020 - mdpi.com
Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …
applications beyond the scope of silicon-based complementary metal oxide semiconductors …
Crystal that remembers: Several ways to utilize nanocrystals in resistive switching memory
The attractive usability of quantum phenomena in futuristic devices is possible by using zero-
dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory …
dimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory …
Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices
HD Kim, HM An, EB Lee, TG Kim - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The authors report upon the ultrafast bipolar switching characteristics observed in aluminum
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …
Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2
Recent demonstrations of controlled switching between different ordered macroscopic states
by impulsive electromagnetic perturbations in complex materials have opened some …
by impulsive electromagnetic perturbations in complex materials have opened some …
Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods
In recent years, resistive switching memory devices are attracted much attention for high-
density non-volatile memory applications owing to their cell scalability, multilevel operations …
density non-volatile memory applications owing to their cell scalability, multilevel operations …
Unipolar resistive switching phenomena in fully transparent SiN-based memory cells
We report the first fabrication of a transparent resistive switching memory (T-RSM) device
using ITO/SiN/ITO capacitors that show a stable endurance of> 100 cycles and a retention …
using ITO/SiN/ITO capacitors that show a stable endurance of> 100 cycles and a retention …
Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells
HD Kim, HM An, TG Kim - IEEE transactions on electron devices, 2012 - ieeexplore.ieee.org
In this paper, for the first time, we report the fabrication of a resistive random access memory
(ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching …
(ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching …
Photochromic response of the PLD-grown nanostructured MoO3 thin films
We have studied the PLD-grown nanostructured MoO 3 thin film for its photochromic
performance. MoO 3 nanostructures were grown at room-temperature using PLD technique …
performance. MoO 3 nanostructures were grown at room-temperature using PLD technique …
Electrical switching in thin film structures based on transition metal oxides
A Pergament, G Stefanovich… - … in Condensed Matter …, 2015 - Wiley Online Library
Electrical switching, manifesting itself in the nonlinear current‐voltage characteristics with S‐
and N‐type NDR (negative differential resistance), is inherent in a variety of materials, in …
and N‐type NDR (negative differential resistance), is inherent in a variety of materials, in …
Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism
observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent …
observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent …