Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …
approaching the unit cell level. When this spatial confinement is combined with observations …
Physics and applications of charged domain walls
PS Bednyakov, BI Sturman, T Sluka… - npj Computational …, 2018 - nature.com
The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …
domains; it carries bound charge owing to a change of normal component of spontaneous …
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
J Jiang, ZL Bai, ZH Chen, L He, DW Zhang… - Nature materials, 2018 - nature.com
Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …
Piezoelectric effect enhanced photocatalysis in environmental remediation: State-of-the-art techniques and future scenarios
Photocatalysis has been widely used as an advanced oxidation process to control pollutants
effectively. However, environmental photocatalysis' decontamination efficiency is restricted …
effectively. However, environmental photocatalysis' decontamination efficiency is restricted …
Nonvolatile ferroelectric field-effect transistors
Future data-intensive applications will have integrated circuit architectures combining
energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a …
energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a …
Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers
Interfacial 'dead'layers between metals and ferroelectric thin films generally induce
detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous …
detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous …
In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces
Direct data processing in nonvolatile memories can enable area‐and energy‐efficient
computation, unlike independent performance between separate processing and memory …
computation, unlike independent performance between separate processing and memory …
Large and accessible conductivity of charged domain walls in lithium niobate
Ferroelectric domain walls are interfaces between areas of a material that exhibits different
directions of spontaneous polarization. The properties of domain walls can be very different …
directions of spontaneous polarization. The properties of domain walls can be very different …
Enhancing the domain wall conductivity in lithium niobate single crystals
C Godau, T Kämpfe, A Thiessen, LM Eng… - ACS …, 2017 - ACS Publications
Domain walls (DWs) in ferroelectric/ferroic materials have been a central research focus for
the last 50 years; DWs bear a multitude of extraordinary physical parameters within a unit …
the last 50 years; DWs bear a multitude of extraordinary physical parameters within a unit …
Hall mobilities and sheet carrier densities in a single conductive ferroelectric domain wall
In the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model
ferroelectric lithium niobate (Li Nb O 3; LNO) have been shown to reach resistances more …
ferroelectric lithium niobate (Li Nb O 3; LNO) have been shown to reach resistances more …