Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
GaN HEMT reliability
JA del Alamo, J Joh - Microelectronics reliability, 2009 - Elsevier
This paper reviews the experimental evidence behind a new failure mechanism recently
identified in GaN high-electron mobility transistors subject to electrical stress. Under high …
identified in GaN high-electron mobility transistors subject to electrical stress. Under high …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage
P Srivastava, J Das, D Visalli, J Derluyn… - IEEE Electron …, 2010 - ieeexplore.ieee.org
In this letter, we present a novel approach to enhance the breakdown voltage (V_\rmBD) for
AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by metal–organic …
AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by metal–organic …
CMOS process-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon
M Van Hove, S Boulay, SR Bahl… - IEEE Electron …, 2012 - ieeexplore.ieee.org
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-
insulator-semiconductor high-electron-mobility transistors. The process starts from a 150 …
insulator-semiconductor high-electron-mobility transistors. The process starts from a 150 …
Recent advances on dielectrics technology for SiC and GaN power devices
Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …
to meet the requirements of the modern power electronics. In fact, they can allow an …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …