Investigation of base high doping impact on the npn solar cell microstructure performance using physically based analytical model
Recently, there is a rapid trend to incorporate low cost solar cells in photovoltaic technology.
In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping …
In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping …
[HTML][HTML] Performance Improvement of npn Solar Cell Microstructure by TCAD Simulation: Role of Emitter Contact and ARC
In the current study, the performance of the npn solar cell (SC) microstructure is improved by
inspecting some modifications to provide possible paths for fabrication techniques of the …
inspecting some modifications to provide possible paths for fabrication techniques of the …
[HTML][HTML] Performance Investigation of a Proposed Flipped npn Microstructure Silicon Solar Cell Using TCAD Simulation
This work aims at inspecting the device operation and performance of a novel flipped npn
microstructure solar cell based on low-cost heavily doped silicon wafers. The flipped …
microstructure solar cell based on low-cost heavily doped silicon wafers. The flipped …
Efficient self-protected thin film c-Si solar cell against reverse-biasing condition: A simulation study
In order to protect the solar panel against reverse biasing, bypass Schottky diodes are
usually connected in parallel with a string of cells which makes the circuit more complex and …
usually connected in parallel with a string of cells which makes the circuit more complex and …
Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser
S Kong, J Wei, G Wang, C Zhou, Q Song, J Wen… - Journal of …, 2022 - Springer
In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and
consider the compatibility with the mature CMOS technology, a new SiGe HBT structure is …
consider the compatibility with the mature CMOS technology, a new SiGe HBT structure is …
Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the …
S Jamasb - Turkish Journal of Electrical Engineering and …, 2019 - journals.tubitak.gov.tr
Electrical transport across the poly/monocrystalline silicon (poly-Si/c-Si) interface has been
investigated by introducing variations in the interface treatment process affecting the …
investigated by introducing variations in the interface treatment process affecting the …
Characterization and Modeling of the Polysilicon Emitter Contact for Circuit Simulation
S Jamasb - Journal of Circuits, Systems and Computers, 2021 - World Scientific
The emitter contact in bipolar transistors with polysilicon emitters has been characterized
based on an improved open-collector (OC) method, which allows extraction of the nonlinear …
based on an improved open-collector (OC) method, which allows extraction of the nonlinear …
Investigation of Base High Doping Impact on the npn Solar Cell Microstructure Performance using Physically Based Analytical Model
S Marwa S, A Zekry, A Shaker - 2021 - repository.msa.edu.eg
Recently, there is a rapid trend to incorporate low cost solar cells in photovoltaic technology.
In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping …
In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping …