Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Multiferroic heterostructures integrating ferroelectric and magnetic materials

JM Hu, LQ Chen, CW Nan - Advanced materials, 2016 - Wiley Online Library
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Ionic gel modulation of RKKY interactions in synthetic anti‐ferromagnetic nanostructures for low power wearable spintronic devices

Q Yang, Z Zhou, L Wang, H Zhang, Y Cheng… - Advanced …, 2018 - Wiley Online Library
To meet the demand of developing compatible and energy‐efficient flexible spintronics,
voltage manipulation of magnetism on soft substrates is in demand. Here, a voltage tunable …

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

L Xie, X Chen, Z Dong, Q Yu, X Zhao… - Advanced Electronic …, 2019 - Wiley Online Library
Abstract Ferroelectric‐field‐effect‐transistor (FeFET) memory, characterized by its
nonvolatile, nondestructive readout operation and low power consumption, has attracted …

Shear-strain-mediated large nonvolatile tuning of ferromagnetic resonance by an electric field in multiferroic heterostructures

M Zheng, T Usami, T Taniyama - NPG Asia Materials, 2021 - nature.com
Controlling magnetism by an electric field is of critical importance for the future development
of ultralow-power electronic and spintronic devices. Progress has been made in electrically …

[HTML][HTML] Multiferroic heterostructures and tunneling junctions

W Huang, S Yang, X Li - Journal of Materiomics, 2015 - Elsevier
Multiferroic heterostructures showing both electric and magnetic orders have attracted much
attention because of their promising applications in the next generation of memories …

Ferroelectric, upconversion emission and optical thermometric properties of color-controllable Er3+-doped Pb (Mg1/3Nb2/3) O3-PbTiO3-Pb (Yb1/2Nb1/2) O3 …

T Zheng, L Luo, P Du, A Deng, W Li - Journal of the European Ceramic …, 2018 - Elsevier
Abstract The (0.98-x)(0.6 Pb (Mg 1/3 Nb 1/3) O 3-0.4 PbTiO 3)-xPb (Yb 1/3 Nb 1/3) O 3-0.02
Pb (Er 1/2 Nb 1/2) O 3 ((0.98-x)(PMN-PT)-xPYN: Er 3+) ceramics were prepared through a …

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

D Li, W Zheng, D Zheng, J Gong, L Wang… - … Applied Materials & …, 2016 - ACS Publications
Electric field induced reversible switchings of the magnetization and resistance were
achieved at room temperature in epitaxial Mn: ZnO (110)/BiFeO3 (001) heterostructures. The …

Engineering Co Vacancies for Tuning Electrical Properties of p-Type Semiconducting Co3O4 Films

P Wang, C Jin, D Zheng, T Yang, Y Wang… - … Applied Materials & …, 2021 - ACS Publications
Spinel oxide Co3O4 has attracted more and more attention for energy-and environment-
related applications. In order to tune the electrical properties of Co3O4, p-type …

Integration of oxide semiconductor thin films with relaxor-based ferroelectric single crystals with large reversible and nonvolatile modulation of electronic properties

ZX Xu, JM Yan, M Xu, L Guo, TW Chen… - … applied materials & …, 2018 - ACS Publications
We report the fabrication of 0.71 Pb (Mg1/3Nb2/3) O3-0.29 PbTiO3 (PMN-0.29 PT)-based
ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin …