A review of switching oscillations of wide bandgap semiconductor devices
J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …
high power density to power converters due to their excellent performance. However, their …
A survey on switching oscillations in power converters
T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …
semiconductor devices offer distinct advantages in power density and dynamic performance …
Silicon carbide power transistors: A new era in power electronics is initiated
During recent years, silicon carbide (SiC) power electronics has gone from being a
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …
A novel active gate driver for improving SiC MOSFET switching trajectory
AP Camacho, V Sala, H Ghorbani… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
Short-circuit protection circuits for silicon-carbide power transistors
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
宽禁带碳化硅功率器件在电动汽车中的研究与应用
王学梅 - 中国电机工程学报, 2014 - epjournal.csee.org.cn
以碳化硅(silicon carbide, SiC) 为主的第3 代半导体技术突破了硅材料半导体器件在耐压等级,
工作温度, 开关损耗和开关速度上的极限, 能够显著减少电力电子变换器的重量, 体积, 成本 …
工作温度, 开关损耗和开关速度上的极限, 能够显著减少电力电子变换器的重量, 体积, 成本 …
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
Experimental and analytical performance evaluation of SiC power devices in the matrix converter
S Safari, A Castellazzi… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
With the commercial availability of SiC power devices, their acceptance is expected to grow
in consideration of the excellent low switching loss, high-temperature operation, and high …
in consideration of the excellent low switching loss, high-temperature operation, and high …
High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors
CM DiMarino, R Burgos… - IEEE Industrial Electronics …, 2015 - ieeexplore.ieee.org
For several decades, silicon (Si) has been the primary semiconductor choice for power
electronic devices. During this time, the development and fabrication of Si devices has been …
electronic devices. During this time, the development and fabrication of Si devices has been …
A class-E direct AC–AC converter with multicycle modulation for induction heating systems
Induction heating systems are the technology of choice in many industrial, domestic, and
medical applications due to its high performance. The core component of such systems is …
medical applications due to its high performance. The core component of such systems is …