Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
Essential characteristics of memristors for neuromorphic computing
W Chen, L Song, S Wang, Z Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …
applied voltage or current. Memristive devices are thus capable of storing and computing …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory
C Yin, C Gong, S Tian, Y Cui, X Wang… - Advanced Functional …, 2022 - Wiley Online Library
Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to
be a very feasible solution for future data storage and neuromorphic computing …
be a very feasible solution for future data storage and neuromorphic computing …
Nonpolar resistive switching of multilayer‐hBN‐based memories
Resistive switching (RS) induced by electrical bias is observed in numerous materials,
including 2D hexagonal boron nitride (hBN), which has been used in resistive random …
including 2D hexagonal boron nitride (hBN), which has been used in resistive random …
Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications
R Khan, NU Rehman, S Iqbal, S Abdullaev… - ACS Applied …, 2023 - ACS Publications
Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …
devices are being investigated for data storage and data-driven computation. Resistive …
Resistance switching memory in perovskite oxides
The resistance switching behavior has recently attracted great attentions for its application
as resistive random access memories (RRAMs) due to a variety of advantages such as …
as resistive random access memories (RRAMs) due to a variety of advantages such as …
Defect dynamics in the resistive switching characteristics of Y0. 95Sr0. 05MnO3 films induced by electronic excitations
We understand the role of defect dynamics on the resistive switching (RS) characteristics of
pulsed laser deposition (PLD) grown Y 0.95 Sr 0.05 MnO 3 (YSMO) manganite films on the …
pulsed laser deposition (PLD) grown Y 0.95 Sr 0.05 MnO 3 (YSMO) manganite films on the …
Resistive switching behaviour of novel GdMnO3-based heterostructures
Synthesis and electrical transport properties of GdMnO 3/Al-doped ZnO (AZO) and GdMnO
3/ZnO (ZO) heterostructures grown by vacuum deposition are described. Pulsed laser …
3/ZnO (ZO) heterostructures grown by vacuum deposition are described. Pulsed laser …
Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol
AI Ivanov, NA Nebogatikova, IA Kotin… - …, 2019 - iopscience.iop.org
Two-layer films of partially fluorinated graphene (PFG) with graphene quantum dots and
polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable …
polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable …