Gallium nitride continues to be a material of intense interest for the ongoing advancement of
electronic and optoelectronic devices. While the bulk of today's markets for low-performance …

As a wide band gap semiconductor, gallium nitride (GaN) has high breakdown voltage,
excellent structural stability and mechanical properties, giving it unique advantages in …

The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN)
vertical pn diode was investigated in various temperature range, and it was compared with …

To investigate the carrier recombination processes in GaN crystals grown by the low-
pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and …

With the ammonothermal method, one of the most promising technologies for scalable, cost-
effective production of bulk single crystals of the wide bandgap semiconductor GaN is …

Monitoring the GaN crystal growth process in the Na-flux method has been difficult due to
the challenging growth process, namely high temperature and high pressure and corrosive …

In recent years, we have achieved low threading dislocation density in GaN wafers by using
the Na-flux multi-point seed technique. However, the resulting wafers exhibit regions of high …

For rooting the development of GaN-based optoelectronic devices, understanding the roles
of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and …

压力容器是量大面广, 具有潜在泄漏和爆炸危险的承压类特种设备, 国家将其列为高端装备,
要求提升产品质量与核心竞争力. 21 世纪初以来, 我国压力容器行业科技工作者在极端压力容器 …

Using the example of III–V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN),
this review presents the special role of hydrostatic pressure in studying semiconductor …