We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-
CMOS-DMOS (BCD) technology. The SiPM is composed of 16× 16 single-photon avalanche …

The 3D vertical integration of SPAD and readout electronics is a promising avenue to high
performance photodetectors. This approach will minimize most limitations of current SiPM …

A monolithic resistorless circuit has been designed for active reset of the N+ P single-ended
(common anode) single-photon avalanche diode (SPAD). This type of SPAD has enhanced …

In this paper we report the results of the assessment of changes in the dark signal delivered
by three silicon photomultiplier (SiPM) detector arrays, fabricated by three different …

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of
a silicon photomultiplier prototype. We study the main characteristics of the developed …

The possibility to design a silicon photomultiplier (SiPM) using standard CMOS processes
represents the frontier of current low photon flux detectors. It allows an integrated …

Silicon photomultipliers produced using standard complementary metal oxide
semiconductor (CMOS) processes are at the basis of modern applications of sensors for …

We present a novel silicon photomultiplier based on a shallow junction obtained within a
standard 0.35 μm complementary metal oxide semiconductor process. The sensitive …

Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are
widely employed in many different applications. However, the custom fabrication …

Single-Photon Avalanche-Diode (SPAD) arrays find extensive use in quantum imaging
techniques that exploit entangledphotons states to overcome sensitivity limitations of …