Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
InGaN solar cells: present state of the art and important challenges
AG Bhuiyan, K Sugita, A Hashimoto… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell… - Nature materials, 2006 - nature.com
Group-III-nitride semiconductors have shown enormous potential as light sources for full-
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
We have derived consistent sets of band parameters (band gaps, crystal field splittings,
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …
band-gap deformation potentials, effective masses, and Luttinger and EP parameters) for …
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN
alloys. The calculations are based on a generalized quasichemical approach, to account for …
alloys. The calculations are based on a generalized quasichemical approach, to account for …
Very high efficiency solar cell modules
A Barnett, D Kirkpatrick, C Honsberg… - Progress in …, 2009 - Wiley Online Library
Abstract The Very High Efficiency Solar Cell (VHESC) program is developing integrated
optical system–PV modules for portable applications that operate at greater than 50 …
optical system–PV modules for portable applications that operate at greater than 50 …
Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
Low-field electron mobility in wurtzite InN
VM Polyakov, F Schwierz - Applied physics letters, 2006 - pubs.aip.org
We report on the low-field electron mobility in bulk wurtzite InN at room temperature and
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …