Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …

Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …

The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …

Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …

In this work, the gamma ray radiation-induced total ionizing dose (TID) effects in SiC power
MOSFETs are investigated. The transistor characteristics, such as transfer curve, output …

This article presents the results of a 2-D finite element simulation study of the gate damages
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …

This article presents the experimental results of the heavy-ion-induced gate oxide damage
and single-event burnout (SEB) in 1200 V SiC double-trench MOSFETs. The short-circuit …

This article presents the experimental characterization of SiC MOSFETs exposed to heavy-
ion irradiation. Different leakage paths related to the drain bias used during the tests are …

In this work, the effects of environmental temperature and ion flux on heavy-ion irradiation
damage in commercial SiC Schottky diodes were experimentally characterized. The result …

The angle impact on the single event effect in SiC Metal-Oxide-Semiconductor Field-Effect
Transistor (MOSFET) has been evaluated by Ta ion irradiation experiments. Two bias …