Raman techniques: fundamentals and frontiers
Driven by applications in chemical sensing, biological imaging and material
characterisation, Raman spectroscopies are attracting growing interest from a variety of …
characterisation, Raman spectroscopies are attracting growing interest from a variety of …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Luminescent probes and sensors for temperature
Temperature (T) is probably the most fundamental parameter in all kinds of science.
Respective sensors are widely used in daily life. Besides conventional thermometers, optical …
Respective sensors are widely used in daily life. Besides conventional thermometers, optical …
Metal–organic frameworks for luminescence thermometry
Y Cui, F Zhu, B Chen, G Qian - Chemical Communications, 2015 - pubs.rsc.org
Metal–organic frameworks (MOFs) hold great promise for developing various types of
luminescent sensors due to their remarkable structural diversity and tunable luminescence …
luminescent sensors due to their remarkable structural diversity and tunable luminescence …
Graphene quilts for thermal management of high-power GaN transistors
Self-heating is a severe problem for high-power gallium nitride (GaN) electronic and
optoelectronic devices. Various thermal management solutions, for example, flip-chip …
optoelectronic devices. Various thermal management solutions, for example, flip-chip …
Energy Dissipation in Monolayer MoS2 Electronics
The advancement of nanoscale electronics has been limited by energy dissipation
challenges for over a decade. Such limitations could be particularly severe for two …
challenges for over a decade. Such limitations could be particularly severe for two …
A current-transient methodology for trap analysis for GaN high electron mobility transistors
J Joh, JA Del Alamo - IEEE Transactions on Electron Devices, 2010 - ieeexplore.ieee.org
Trapping is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …
Diamond quantum thermometry: From foundations to applications
M Fujiwara, Y Shikano - Nanotechnology, 2021 - iopscience.iop.org
Diamond quantum thermometry exploits the optical and electrical spin properties of colour
defect centres in diamonds and, acts as a quantum sensing method exhibiting ultrahigh …
defect centres in diamonds and, acts as a quantum sensing method exhibiting ultrahigh …
Mapping elevated temperatures with a micrometer resolution using the luminescence of chemically stable upconversion nanoparticles
TP Van Swieten, T Van Omme… - ACS applied nano …, 2021 - ACS Publications
The temperature-sensitive luminescence of nanoparticles enables their application as
remote thermometers. The size of these nanothermometers makes them ideal to map …
remote thermometers. The size of these nanothermometers makes them ideal to map …
Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices
The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated
AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography …
AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography …