Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Strain-driven optical, electronic, and mechanical properties of inorganic halide perovskite CsGeBr3
Of late, inorganic perovskite material, especially the lead-free CsGeBr 3, has gained
considerable interest in the green photovoltaic industry due to its outstanding optoelectronic …
considerable interest in the green photovoltaic industry due to its outstanding optoelectronic …
Identifying Carrier Behavior in Ultrathin Indirect‐Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible‐Blind High‐Energy Detectors
High‐energy radiation detectors such as X‐ray detectors with low light photoresponse
characteristics are used for several applications including, space, medical, and military …
characteristics are used for several applications including, space, medical, and military …
Study of new lead-free double perovskites halides Tl2TiX6 (X= Cl, Br, I) for solar cells and renewable energy devices
In recent years, lead-free double perovskites have been found tremendously advantageous
due to their unique optoelectronic and environmentally benign photovoltaic characteristics …
due to their unique optoelectronic and environmentally benign photovoltaic characteristics …
First principle study of optoelectronic and mechanical properties of lead-free double perovskites Cs2SeX6 (X = Cl, Br, I)
TI Al-Muhimeed, AI Aljameel, A Mera… - Journal of Taibah …, 2022 - Taylor & Francis
The variant double perovskites are considered novel materials for solar cells and
optoelectronic applications. Here, we explored electronic, mechanical, and optical …
optoelectronic applications. Here, we explored electronic, mechanical, and optical …
[HTML][HTML] Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
A highly crystalline single-or few-layered 2D-MoS 2 induces a high dark current, due to
which an extremely small photocurrent generated by a few photons can be veiled or …
which an extremely small photocurrent generated by a few photons can be veiled or …
Enhanced performance of an AlGaN-based deep-ultraviolet LED having graded quantum well structure
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …
An ab-initio study to investigate the structural, mechanical, electrical, optical and thermal properties of the AZrO3 (A= Mg, Ca, Sr, Ba, Sn, Cu) compounds
Abstract Density Functional Theory (DFT) based ab-initio manner has been executed for
investigating the comparative study of lead-free cubic-type perovskites materials AZrO 3 (A …
investigating the comparative study of lead-free cubic-type perovskites materials AZrO 3 (A …
III-nitride deep UV LED without electron blocking layer
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL)
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …