A study of conventional and junctionless MOSFET using TCAD simulations
As the transistors are scaling down, a conventional MOSFET calls for stringent doping
gradients which are quite difficult to achieve. Moreover, the short channel effects become …
gradients which are quite difficult to achieve. Moreover, the short channel effects become …
Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors
So far, various state‐of‐art techniques have been widely addressed to design ultra‐low
power semiconductors. Doping technique (TFET, junctionless transistor), oxide material …
power semiconductors. Doping technique (TFET, junctionless transistor), oxide material …
Analytical Modeling of Asymmetric Gate Stack Junctionless Dual Material Surrounding Gate MOSFET for Enhanced Hot Carrier Reliability
The analytical modelling of asymmetric gate stack junctionless dual material surrounding
gate (AGSJLDMSG) MOSFET was suggested in this article to enhance hot carrier reliability …
gate (AGSJLDMSG) MOSFET was suggested in this article to enhance hot carrier reliability …
A performance model of synchronization mechanisms in a file system
A Hać - 1987 IEEE Third International Conference on Data …, 1987 - ieeexplore.ieee.org
This paper presents a practical method for evaluating file systems in which synchronization
mechanisms are modeled using measurable parameters. A queueing network model of a …
mechanisms are modeled using measurable parameters. A queueing network model of a …