Nanotube? lms and articles and methods of making the same are disclosed. A conductive
article includes an aggregate of nanotube segments in Which the nanotube segments …

Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described.
Embodiments are described that use a self-aligned double patterning method for one or …

Electromechanical circuits, such as memory cells, and methods for making same are
disclosed. The circuits include a structure having electrically conductive traces and supports …

US7264990B2 - Methods of nanotubes films and articles - Google Patents US7264990B2 -
Methods of nanotubes films and articles - Google Patents Methods of nanotubes films and …

6,365,419 B1 4/2002 Durlam et a1. 6,421,270 B1 7/2002 Tai sub-layer formed on top of the
bottom electrode, a nano current-channel (NCC) layer formed on top of the? rst free sub …

US8120949B2 - Low-cost non-volatile flash-RAM memory - Google Patents US8120949B2 -
Low-cost non-volatile flash-RAM memory - Google Patents Low-cost non-volatile flash-RAM …

In accordance with a method of the present invention, a method of manufacturing a magnetic
random access memory (MRAM) cell and a corresponding structure thereof are dis closed to …

Same. A nanotube films produced from a conductive article includes an aggregate of
nanotube Segments. The nanotube Segments contact other nanotube Segments to define a …

(57) ABSTRACT A method of making a magnetic random access memory cell includes
forming a magnetic tunneljunction (MTJ) on top of a wafer, depositing oxide on top of the …

(57) ABSTRACT A hybrid memory System having electromechanical memory cells is
disclosed. A memory cell core circuit has an array of electromechanical memory cells, in …