The future of two-dimensional semiconductors beyond Moore's law

KS Kim, J Kwon, H Ryu, C Kim, H Kim, EK Lee… - Nature …, 2024 - nature.com
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Making clean electrical contacts on 2D transition metal dichalcogenides

Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

S Kang, D Lee, J Kim, A Capasso, HS Kang… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) semiconductors hold promises for electronic and
optoelectronic applications due to their outstanding electrical and optical properties. Despite …

The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms

Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li… - Advanced …, 2022 - Wiley Online Library
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction

Z Yang, C Kim, KY Lee, M Lee… - Advanced …, 2019 - Wiley Online Library
Currently 2D crystals are being studied intensively for use in future nanoelectronics, as
conventional semiconductor devices face challenges in high power consumption and short …

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

A Di Bartolomeo, A Grillo, F Urban… - Advanced Functional …, 2018 - Wiley Online Library
The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical
vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed …

Fermi-level depinning of 2D transition metal dichalcogenide transistors

RS Chen, G Ding, Y Zhou, ST Han - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

W Fei, J Trommer, MC Lemme, T Mikolajick… - InfoMat, 2022 - Wiley Online Library
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, developing semiconductor technology with novel concepts and …

Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

KK Kim, HS Lee, YH Lee - Chemical Society Reviews, 2018 - pubs.rsc.org
Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene,
which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as …

Recent progress in 1D contacts for 2D‐material‐based devices

MS Choi, N Ali, TD Ngo, H Choi, B Oh… - Advanced …, 2022 - Wiley Online Library
Recent studies have intensively examined 2D materials (2DMs) as promising materials for
use in future quantum devices due to their atomic thinness. However, a major limitation …