Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions
B Maxime, O Remy, C Thibault, B Pierre… - 2015 17th European …, 2015 - ieeexplore.ieee.org
Commercial Silicon Carbide have been characterized under various configuration to assess
their maturity and capability to replace their Silicon counterparts in 1.2 kV converter …
their maturity and capability to replace their Silicon counterparts in 1.2 kV converter …
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures
This paper presents a reliability study of a 1.2 kV SiC MOSFET under HTRB (High
Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon …
Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon …
Power semiconductor ageing test bench dedicated to photovoltaic applications
M Dbeiss, Y Avenas - IEEE Transactions on Industry …, 2019 - ieeexplore.ieee.org
This paper presents a new concept of semiconductor ageing test benches dedicated to
photovoltaic inverters. The ageing profile is obtained by analyzing mission profiles of the …
photovoltaic inverters. The ageing profile is obtained by analyzing mission profiles of the …
Contribution to the study of the SiC MOSFETs gate oxide
OA Salvadó - 2018 - theses.hal.science
SiC power MOSFETs are called to replace Si IGBT for some medium and high power
applications (hundreds of kVA). However, even if crystallographic defects have been …
applications (hundreds of kVA). However, even if crystallographic defects have been …
Static behavior analysis of silicon carbide power MOSFET for temperature variations
W Jouha, P Dherbecourt, E Joubert… - … on Electrical and …, 2016 - ieeexplore.ieee.org
This paper proposes an analysis of the static behavior of a SiC-MOSFET power transistor for
temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is …
temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is …
Vieillissement accéléré de modules de puissance de type MOSFET SiC et IGBT Si basé sur l'analyse de profils de mission d'onduleurs photovoltaïques.
M Dbeiss - 2018 - theses.hal.science
Dans le cas des installations photovoltaïques, l'onduleur est le premier élément défaillant
dont il est difficile d'anticiper la panne, et peu d'études ont été faites sur la fiabilité de ce type …
dont il est difficile d'anticiper la panne, et peu d'études ont été faites sur la fiabilité de ce type …
Electrical and thermal modeling and aging study of a C2M0025120D silicon carbide-based power MOSFET transistor
E Baghaz, A Naamane, NK M'sirdi - … of the 1st International Conference on …, 2019 - Springer
In most papers studies about MOSFETs aging are treated from a materiel point of view, in
this paper we consider the electrical aspects that contribute to such degradation. Two …
this paper we consider the electrical aspects that contribute to such degradation. Two …
An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET
W Jouha, P Dherbécourt, A El Oualkadi… - International Journal of …, 2019 - innove.org
This paper aims to model the static behavior of two generations of Silicon carbide Metal
Oxide Semiconductor Field Effect Transistors (SiC-MOSFETs) subjected to temperature and …
Oxide Semiconductor Field Effect Transistors (SiC-MOSFETs) subjected to temperature and …
Conception, optimisation et caractérisation d'un transistor à effet de champ haute tension en Carbure de Silicium
S Niu - 2016 - theses.hal.science
La thèse intitulée" Conception, caractérisation et optimisation d'un transistor à effet de
champ haute tension en Carbure de Silicium (SiC) et de leur diode associée", s' est …
champ haute tension en Carbure de Silicium (SiC) et de leur diode associée", s' est …
Mise en oeuvre de moyens de vieillissement accéléré et d'analyses dédiés aux composants de puissance grand gap.
JZ Fu - 2018 - theses.hal.science
Cette thèse constitue un des éléments du projet de recherche EMOCAVI (Evolution des
Modèles des Composants de puissance grand gAp au cours du VIeillissement). Elle porte …
Modèles des Composants de puissance grand gAp au cours du VIeillissement). Elle porte …