N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
A review of the synthesis of reduced defect density InxGa1− xN for all indium compositions
A review of metal rich and nitrogen rich (N-rich), low-temperature grown In x Ga 1− x N is
provided, focusing on two low-temperature approaches that have resulted in non-phase …
provided, focusing on two low-temperature approaches that have resulted in non-phase …
Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells
CAM Fabien, WA Doolittle - Solar Energy Materials and Solar Cells, 2014 - Elsevier
Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics,
yet theoretical promise has not been experimentally demonstrated. Several major …
yet theoretical promise has not been experimentally demonstrated. Several major …
Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films
The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐
rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation …
rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation …
Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate …
P Dalapati, K Yamamoto, T Egawa… - Sensors and Actuators A …, 2021 - Elsevier
The impact of growth temperature (GT), in the range from 875° to 825° C, on the
morphological, structural, electrical, and optical properties of InGaN/GaN multiple quantum …
morphological, structural, electrical, and optical properties of InGaN/GaN multiple quantum …
Surface evolution of thick InGaN epilayers with growth interruption time
Z Lv, H Wang, H Jiang - The Journal of Physical Chemistry C, 2021 - ACS Publications
Surface morphology of thick In x Ga1–x N (x∼ 0.14) epilayers mediated by growth
interruption was investigated. The interruption was performed by changing the turn-off time …
interruption was investigated. The interruption was performed by changing the turn-off time …
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
S Valdueza-Felip, E Bellet-Amalric… - Journal of Applied …, 2014 - pubs.aip.org
We report the interplay between In incorporation and strain relaxation kinetics in high-In-
content In x Ga 1-x N (x= 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For …
content In x Ga 1-x N (x= 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For …
Low-temperature growth of InGaN films over the entire composition range by MBE
The surface morphology, microstructural, and optical properties of indium gallium nitride
(InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth …
(InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth …
[HTML][HTML] Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts
The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel
diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have …
diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have …