Controversial issues in negative bias temperature instability
In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered
promising candidates for power devices due to their superior advantages of high current …
promising candidates for power devices due to their superior advantages of high current …
Ferroelectric field-effect transistor synaptic device with hafnium-silicate interlayer
A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer
and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with …
and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
Defect loss: A new concept for reliability of MOSFETs
Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …
addressed the generation kinetics and process. The current understanding is that the …
Application of single-pulse charge pumping method on evaluation of indium gallium zinc oxide thin-film transistors
MC Nguyen, AHT Nguyen, H Ji, J Cheon… - … on Electron Devices, 2018 - ieeexplore.ieee.org
A novel single-pulse charge pumping (SPCP) method was proposed and implemented to
profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors …
profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors …
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density
In this article, we report on the single pulse charge pumping (SPCP) measurements as a
method to extract the interface trap density () on the GaN metal–oxide–semiconductor high …
method to extract the interface trap density () on the GaN metal–oxide–semiconductor high …
Analysis of electron capture process in charge pumping sequence using time domain measurements
A method for analyzing the electron capture process in the charge pumping (CP) sequence
is proposed and demonstrated. The method monitors the electron current in the CP …
is proposed and demonstrated. The method monitors the electron current in the CP …
Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory
T Tsuchiya, PM Lenahan - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
We carried out a unique and systematic characterization of single amphoteric Si/SiO 2
interface traps using the charge pumping (CP) method. As a result, we obtained the …
interface traps using the charge pumping (CP) method. As a result, we obtained the …
An overview of the NBTI phenomenon in MOS devices
DE Messaoud, B Djezzar, A Zitouni - Russian Microelectronics, 2023 - Springer
Based on the vast perusal, an overview on the negative bias temperature instability (NBTI)
effect in metal oxide semiconductor (MOS) devices, from different perspectives as well as …
effect in metal oxide semiconductor (MOS) devices, from different perspectives as well as …