Design rules for phase‐change materials in data storage applications

D Lencer, M Salinga, M Wuttig - Advanced Materials, 2011 - Wiley Online Library
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics

B Jiang, W Wang, S Liu, Y Wang, C Wang, Y Chen… - Science, 2022 - science.org
The high-entropy concept provides extended, optimized space of a composition, resulting in
unusual transport phenomena and excellent thermoelectric performance. By tuning electron …

Memristive devices for new computing paradigms

IH Im, SJ Kim, HW Jang - Advanced Intelligent Systems, 2020 - Wiley Online Library
In complementary metal–oxide–semiconductor (CMOS)‐based von Neumann architectures,
the intrinsic power and speed inefficiencies are worsened by the drastic increase in …

Germanium chalcogenide thermoelectrics: electronic structure modulation and low lattice thermal conductivity

S Roychowdhury, M Samanta, S Perumal… - Chemistry of …, 2018 - ACS Publications
Thermoelectric materials can convert untapped heat to electricity and are expected to have
an important role in future energy utilization. IV–VI metal chalcogenides are the most …

Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing

Q Wang, R Luo, Y Wang, W Fang… - Advanced Functional …, 2023 - Wiley Online Library
Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite
related to the encoding of information and its emulation using electronic hardware is one of …

[HTML][HTML] A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

S Qu, L Gao, J Wang, H Chen, J Zhang - Micromachines, 2024 - mdpi.com
The global demand for radio frequency (RF) modules and components has grown
exponentially in recent decades. RF switches are the essential unit in RF front-end and …

Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials

R Mazzarello, S Caravati, S Angioletti-Uberti… - Physical review …, 2010 - APS
We computed the Raman spectrum of amorphous GeTe by ab initio simulations and
empirical bond polarizability models. The calculated spectrum is in very good agreement …

Amorphous and crystallized Ge–Sb–Te thin films deposited by pulsed laser: Local structure using Raman scattering spectroscopy

P Němec, V Nazabal, A Moréac, J Gutwirth… - Materials Chemistry and …, 2012 - Elsevier
UV pulsed laser deposition was employed for the fabrication of amorphous (GeTe) x
(Sb2Te3) 1− x,(x= 1, 0.66, 0.5, 0.33, and 0) thin films. The local structure of as-deposited …

Physical properties' temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials

AA Burtsev, NN Eliseev, VA Mikhalevsky… - Materials Science in …, 2022 - Elsevier
The work presents the results of comprehensive studies of the electrical resistivity and
optical transmission coefficient temperature dynamics, phase transition heats, the phase …

[HTML][HTML] Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys

EM Vinod, K Ramesh, KS Sangunni - Scientific reports, 2015 - nature.com
Abstract Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …