Design rules for phase‐change materials in data storage applications
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …
and a crystalline phase. Since both phases are characterized by very different optical and …
High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics
The high-entropy concept provides extended, optimized space of a composition, resulting in
unusual transport phenomena and excellent thermoelectric performance. By tuning electron …
unusual transport phenomena and excellent thermoelectric performance. By tuning electron …
Memristive devices for new computing paradigms
In complementary metal–oxide–semiconductor (CMOS)‐based von Neumann architectures,
the intrinsic power and speed inefficiencies are worsened by the drastic increase in …
the intrinsic power and speed inefficiencies are worsened by the drastic increase in …
Germanium chalcogenide thermoelectrics: electronic structure modulation and low lattice thermal conductivity
Thermoelectric materials can convert untapped heat to electricity and are expected to have
an important role in future energy utilization. IV–VI metal chalcogenides are the most …
an important role in future energy utilization. IV–VI metal chalcogenides are the most …
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing
Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite
related to the encoding of information and its emulation using electronic hardware is one of …
related to the encoding of information and its emulation using electronic hardware is one of …
[HTML][HTML] A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer
S Qu, L Gao, J Wang, H Chen, J Zhang - Micromachines, 2024 - mdpi.com
The global demand for radio frequency (RF) modules and components has grown
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials
R Mazzarello, S Caravati, S Angioletti-Uberti… - Physical review …, 2010 - APS
We computed the Raman spectrum of amorphous GeTe by ab initio simulations and
empirical bond polarizability models. The calculated spectrum is in very good agreement …
empirical bond polarizability models. The calculated spectrum is in very good agreement …
Amorphous and crystallized Ge–Sb–Te thin films deposited by pulsed laser: Local structure using Raman scattering spectroscopy
P Němec, V Nazabal, A Moréac, J Gutwirth… - Materials Chemistry and …, 2012 - Elsevier
UV pulsed laser deposition was employed for the fabrication of amorphous (GeTe) x
(Sb2Te3) 1− x,(x= 1, 0.66, 0.5, 0.33, and 0) thin films. The local structure of as-deposited …
(Sb2Te3) 1− x,(x= 1, 0.66, 0.5, 0.33, and 0) thin films. The local structure of as-deposited …
Physical properties' temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials
AA Burtsev, NN Eliseev, VA Mikhalevsky… - Materials Science in …, 2022 - Elsevier
The work presents the results of comprehensive studies of the electrical resistivity and
optical transmission coefficient temperature dynamics, phase transition heats, the phase …
optical transmission coefficient temperature dynamics, phase transition heats, the phase …
[HTML][HTML] Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys
EM Vinod, K Ramesh, KS Sangunni - Scientific reports, 2015 - nature.com
Abstract Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …