In this paper, a novel two-dimensional analytical model for threshold voltage on Dual
Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed …

In this paper a new conical surrounding gate metal-oxide-semiconductor field effect
transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD …

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher
speed, higher current drive, lower power consumption, enhanced short channel immunity …

In this study dual material gate FinFET is designed to work as a dielectric modulated
biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold …

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material
surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation …

We propose a scaling theory for single gate AlInSb/InSb high electron mobility transistors
(HEMTs) by solving the two-dimensional (2D) Poisson equation. In our model, the effective …

In this paper, a new scale length theory for tri-material surrounding gate tunnel field-effect
transistor (TMSG-TFET) has been proposed and derived. The scale length accounts for the …

In this paper, the concept of Triple Material Gate (TMG) work function engineering is
incorporated in the SG Nanoscale MOSFETs, to increase the overall device performance in …

In this chapter, an analytical model for single gate AlInSb/InSb HEMT device has been
developed. A 2D sub threshold analysis of the proposed device is done to evaluate the …

We propose a scaling theory for single gate AlInSb/InSb high electron mobility transistors
(HEMTs) by solving the two-dimensional (2D) Poisson equation. In our model, the effective …