In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

In this review, we provide an overview of the most common majority and minority charge
carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different …

Point defects in silicon carbide (SiC) can act as charge carrier traps and have a pronounced
impact on material properties such as the mobility and carrier lifetime. Prominent among …

Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy
(MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) …

Ion implantation of 4H-SiC is one of the crucial steps in the fabrication of power devices. This
process results in the generation of electrically active defects both in the implanted region …

Despite advances toward improving the quality of p-type 4H-SiC substrates and layers, we
still have no model capable of accounting for the multitude of boron-related optical, junction …

Recent developments in state-of-the-art (SOTA) complementary metal-oxide-
semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response …

This paper presents a theoretical study of the electronic and dynamic properties of silicon
vacancies and self-interstitials in 4H–SiC using hybrid density functional methods. Several …

Particle irradiation is known to give rise to several majority carrier traps in the band gap of n-
type 4H-SiC, in the 0.4–1.6 eV energy range below the conduction band edge (EC). Among …