The copper damascene process is one of the most promising technologies to fabricate Cu
interconnection for high-speed logic LSIs (large-scale integrated circuits). 1, 2 Chemical …

Chemical mechanical planarization (CMP), a commonly employed process for attaining
local and global planarization in integrated circuits fabrication, leaves contaminants and …

Chemical mechanical polishing (CMP) is considered as the paradigm shift that enabled
optical photolithography to continue down to 0.12/spl mu/m. Currently, the polishing physics …

The fundamental processes related to the removal of fine particles from surfaces in a
hydrodynamic flow field are not adequately understood. A critical particle Reynolds number …

Chemical-mechanical planarization (CMP) is inherently a dirty process. Defect minimization
in CMP is of great interest to the overall success of the manufacturing of sub-0.20 μm …

To achieve a defect-free wafer surface, slurry residuals and other contaminants are required
to be removed after a chemical mechanical planarization (CMP) process. Brush scrubbing, a …

Copper (Cu) corrosion during chemical mechanical polishing (CMP) was controlled in order
to improve the Cu damascene interconnect process. Slurry chemical corrosion was found to …

Tribological attributes of post-chemical mechanical planarization (CMP) brush scrubbing are
investigated as a function of tool kinematics, applied pressure, pH, and flow rate of the …

Investigations have been conducted on the feasibility of removal of particles from silicon
wafers in electrolyte solutions of different ionic strengths irradiated with megasonic waves …

Behavior of an eccentric PVA brush is investigated during post-Cu chemical mechanical
planarization (CMP) brush cleaning. It is observed that the measured contact pressure and …