N-and P-type doping of diamonds: A review
Diamond has been one of the most investigated ultrawide bandgap (UWBG)
semiconductors for optoelectronics, superconductors, energy, and quantum applications for …
semiconductors for optoelectronics, superconductors, energy, and quantum applications for …
First principles investigation on the Boron‐VA (VA= N, P, As, Sb) complexes in diamond for possible n-type conductivity
B Feng, K Tang, K Yang, G Zhao, L Gu, K Fan… - Materials Today …, 2024 - Elsevier
The possibility of group VA mono-doping and B-VA (VA= N, P, As, Sb) co-doping impurities
being effective shallow donors in diamond is explored through first principles calculations. It …
being effective shallow donors in diamond is explored through first principles calculations. It …
The boron-phosphorous co-doping scheme for possible n-type diamond from first principles
K Fan, K Tang, M Zhang, K Wu, G Zhao… - Computational Materials …, 2023 - Elsevier
In this paper, we have investigated a boron-phosphorous co-doping scheme in diamond
bulk for the possibility of realizing n-type conductive diamond by first-principles calculations …
bulk for the possibility of realizing n-type conductive diamond by first-principles calculations …
Mechanistic insights into the electrical properties of Ti3C2T2/WS2 (T= F, O, OH) interfaces tuned by functional groups
J Guo, Y Liu, Y Ge, S Sang, Q Zhang - Computational Materials Science, 2025 - Elsevier
In a large number of two-dimensional (2D) materials, WS 2 has received much attention in
nanoelectronic devices for its high on-state current density and mobility. An essential …
nanoelectronic devices for its high on-state current density and mobility. An essential …
First-principles study on adhesive work, electronic structures and mechanical properties of Cr/Ti-doped Cu (100)/diamond (100) interfaces
Z Deng, J Lu, H Li, Y Wu, X Xu, Q Miao… - Diamond and Related …, 2024 - Elsevier
For brazed tools, diamond is an optimal abrasive to process the hard and brittle materials,
and the interface reaction between it and the filler alloy determines the performance of the …
and the interface reaction between it and the filler alloy determines the performance of the …
The regulation effect of trace amount of oxygen on the properties of p-type boron-doped diamond
G Zhao, K Tang, Y Teng, W Zhao, K Yang… - Journal of Materials …, 2024 - Springer
The light doping behavior of boron in microwave plasma chemical vapor deposition
diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) …
diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) …
First-Principles Study on Adhesive Work, Electronic and Mechanical Properties of Cr/Ti-Doped Cu (100)/Diamond (100) Interfaces
Z Deng, L Jinbin, H Li, Y Wu, X Xu, Q Miao… - … of Cr/Ti-Doped Cu (100) … - papers.ssrn.com
For brazed tools, diamond is an optimal abrasive to process the hard and brittle materials,
and the interface reaction between it and the filler alloy determines the performance of the …
and the interface reaction between it and the filler alloy determines the performance of the …