At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …

This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …

Due to its wide band gap and availability as a single crystal, β-G a 2 O 3 has potential for
applications in many areas of micro/optoelectronics and photovoltaics. Still, little is as yet …

We report the results of a comprehensive study on the structural, electronic, and optical
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …

Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …

The passivation of interface states remains an important problem for III-V based
semiconductor devices. The role of the most stable bound native oxides GaO x (0.5≤ x≤ …

Electronic and thermodynamic properties of β-Ga 2 O 3 are investigated in the framework of
density functional theory. The equilibrium structural parameters and Debye temperature are …

Over the years, many new materials have been introduced in advanced complementary
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …