Towards oxide electronics: a roadmap
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …
experiencing a constant and breathtaking increase of device speed and density, Moore's …
Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in
Due to its wide band gap and availability as a single crystal, β-G a 2 O 3 has potential for
applications in many areas of micro/optoelectronics and photovoltaics. Still, little is as yet …
applications in many areas of micro/optoelectronics and photovoltaics. Still, little is as yet …
First-principles study of the structural, electronic, and optical properties of in its monoclinic and hexagonal phases
We report the results of a comprehensive study on the structural, electronic, and optical
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …
[HTML][HTML] High-k/Ge MOSFETs for future nanoelectronics
Y Kamata - Materials today, 2008 - Elsevier
Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
The passivation of interface states remains an important problem for III-V based
semiconductor devices. The role of the most stable bound native oxides GaO x (0.5≤ x≤ …
semiconductor devices. The role of the most stable bound native oxides GaO x (0.5≤ x≤ …
Electronic and thermodynamic properties of β-Ga2O3
Electronic and thermodynamic properties of β-Ga 2 O 3 are investigated in the framework of
density functional theory. The equilibrium structural parameters and Debye temperature are …
density functional theory. The equilibrium structural parameters and Debye temperature are …
Ultimate scaling of CMOS logic devices with Ge and III–V materials
M Heyns, W Tsai - Mrs bulletin, 2009 - cambridge.org
Over the years, many new materials have been introduced in advanced complementary
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …