Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma
J Sun, Z Chen, S Zhou, Y Sun, Z Liu, C Chen, Y Liu… - Vacuum, 2023 - Elsevier
Silicon nitride (SiN x) has been playing a vital role in the fabrication of micro-and nano-scale
structures in numerous applications for several decades. Optimal etch recipes and a …
structures in numerous applications for several decades. Optimal etch recipes and a …
Research on the synergistic effect of total ionization and displacement dose in GaN HEMT using neutron and gamma-ray irradiation
R Chen, Y Liang, J Han, Q Lu, Q Chen, Z Wang… - Nanomaterials, 2022 - mdpi.com
This paper studies the synergistic effect of total ionizing dose (TID) and displacement
damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) …
damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) …
Analysis of Single Event Gate Rupture in Trench Gate SJ-VDMOS with SiO2-Si3N4 Dielectric Stacking
R Verma, S Ranjan… - 2021 IEEE Region 10 …, 2021 - ieeexplore.ieee.org
In this proposed work, single event gate rupture (SEGR) analysis was performed on a
vertical double diffused metal oxide semiconductor field effect transistor (VDMOS) where the …
vertical double diffused metal oxide semiconductor field effect transistor (VDMOS) where the …
Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate
R Cao, H Liu, K Wang, D Hu, Y Wang, X Zeng… - Journal of …, 2024 - Springer
The synergistic effect of total ionizing dose on single event gate rupture (SEGR) was
simulated in the vertical double diffusion metal oxide semiconductor device with SiO2 …
simulated in the vertical double diffusion metal oxide semiconductor device with SiO2 …
[HTML][HTML] Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates
Y Qi, D Wang, J Zhou, K Zhang, Y Kong… - Nanotechnology and …, 2020 - pubs.aip.org
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are
beginning to enter the public scene from a range of suppliers. Based on previous studies …
beginning to enter the public scene from a range of suppliers. Based on previous studies …