Structural characterization of polycrystalline thin films by X-ray diffraction techniques
X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with
minimal sample preparation. XRD provides the first information about the materials phases …
minimal sample preparation. XRD provides the first information about the materials phases …
Overview of residual stress in MEMS structures: Its origin, measurement, and control
Micro-electro-mechanical system (MEMS) technology has radically changed the scale,
performance, and cost of a wide variety of sensors and actuators by taking advantage of …
performance, and cost of a wide variety of sensors and actuators by taking advantage of …
AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600° C
The experimental demonstration of aluminum scandium nitride (AlScN)‐on‐cubic silicon
carbide (SiC) heterostructure thin film micromachined resonant transducers operating in a …
carbide (SiC) heterostructure thin film micromachined resonant transducers operating in a …
Effect of a seed layer on microstructure and electrical properties of Ga2O3 films on variously oriented Si substrates
The realization of the free interface strain between a Ga 2 O 3 material and a substrate is
significantly critical to fulfill the requirements for the fabrication of high-quality Ga 2 O 3 …
significantly critical to fulfill the requirements for the fabrication of high-quality Ga 2 O 3 …
High-quality c-axis oriented Al (Sc) N thin films prepared by magnetron sputtering
M Wang, H Bo, A Wang, Z Cheng, S Li, W Zou, J He… - Thin Solid Films, 2023 - Elsevier
In order to adapt to the upgrading of wireless communication system, thin film bulk acoustic
resonator (FBAR) has become one of the research hotspots in the communication field. The …
resonator (FBAR) has become one of the research hotspots in the communication field. The …
Predicting residual stress of aluminum nitride thin-film by incorporating manifold learning and tree-based ensemble classifier
HF Chen, YP Yang, WL Chen, PJ Wang, W Lai… - Materials Chemistry and …, 2023 - Elsevier
The optical emission spectroscopy (OES) data provide multi-featured and high-dimension
data, which exhibit rich physical phenomena. The novel unsupervised learning uniform …
data, which exhibit rich physical phenomena. The novel unsupervised learning uniform …
Hetero-epitaxial growth of AlN deposited by DC magnetron sputtering on Si (111) using a AlN buffer layer
This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer
layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films …
layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films …
Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications
The present study reports the effect of bottom electrodes (Al, Pt & Ti) on the texture,
piezoelectric characteristics, dielectric properties and leakage current behavior of reactive …
piezoelectric characteristics, dielectric properties and leakage current behavior of reactive …
High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics
Thin AlN epi-layers (∼ 100 nm) were grown on a SiC substrate by MOVPE (Metal Organic
Vapor Phase Epitaxy). The effect of V/III ratio and growth rate on the surface morphology …
Vapor Phase Epitaxy). The effect of V/III ratio and growth rate on the surface morphology …
Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer
We have investigated the impact of AlN buffer layer growth parameters for developing highly
single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for …
single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for …