Atomistic-based multiscale and molecular dynamics modeling are powerful tools to simulate
the localized strain problems, offering tremendous opportunities to bridge the knowledge …

Surface integrity of parts can seriously be damaged by mechanical and thermal loads during
machining leading to crack initiation, constraining of parts or damage. At present, it is very …

To study the influence of strain rate and heat effect on the removal behavior of SiC, the
dislocation nucleation/propagation, amorphization and abrasive wear behavior are …

Reaction-bonded silicon carbide (RB-SiC) is an important material used in aerospace
optical systems. Due to the property mismatch between Si and SiC phases, the underlying …

The effects of strain rate on material deformation and tribology behavior of 4H‐SiC are
studied with high speed scratching tests, which represent typical processing modes of SiC …

In this research, we performed molecular dynamics (MD) simulation to investigate the
material removal mechanism and subsurface damage formation during nano-scratching of …

Highly-oriented 3C-SiC possesses good out-of-plane orientation uniformity, and has more
potential to obtain uniform surface quality during ultra-precision machining, compared with …

Single-crystal silicon is extensively applied in electronic devices, but the traditional
ultraprecision diamond turning methods easily cause worse surface quality or surface …

Abstract Introduction Monocrystal SiC is representative of the third generation
semiconductor materials, the efficient process technology of 6H-SiC wafer have always …

In this study, the influence mechanism of the coupling effect on the material removal process
of SiC in nanoscale condition is investigated using the molecular dynamics method. The …