Inorganic thermoelectric materials: A review
Thermoelectric generator, which converts heat into electrical energy, has great potential to
power portable devices. Nevertheless, the efficiency of a thermoelectric generator suffers …
power portable devices. Nevertheless, the efficiency of a thermoelectric generator suffers …
Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …
switches, and multivalued logic (MVL) devices, which hold promising potential for next …
First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications
A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is
presented for neuromorphic applications. The synaptic behaviors of the JL metal …
presented for neuromorphic applications. The synaptic behaviors of the JL metal …
Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors
Two‐dimentional semiconductors have shown potential applications in multi‐bridge channel
field‐effect transistors (MBC‐FETs) and complementary field‐effect transistors (C‐FETs) due …
field‐effect transistors (MBC‐FETs) and complementary field‐effect transistors (C‐FETs) due …
Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
In recent times, FET-based sensors have been widely used in industrial and domestic
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded …
Performance evaluation and reliability issues of junctionless CSG MOSFET for RFIC design
This paper investigates the reliability issues of junctionless cylindrical surrounding-gate (JL
CSG) MOSFET by employing temperature variations, ranging from 200 K to 500 K, along …
CSG) MOSFET by employing temperature variations, ranging from 200 K to 500 K, along …
Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node
J Yao, J Li, K Luo, J Yu, Q Zhang, Z Hou… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
We present a comprehensive theoretical investigation of the quantum confinement limited
mobility in the Si 1-x Ge x-channel gate-all-around nanosheet field effect transistor for 5-nm …
mobility in the Si 1-x Ge x-channel gate-all-around nanosheet field effect transistor for 5-nm …
A vertically integrated junctionless nanowire transistor
A vertically integrated junctionless field-effect transistor (VJ-FET), which is composed of
vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure …
vertically stacked multiple silicon nanowires (SiNWs) with a gate-all-around (GAA) structure …
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
D Madadi, S Mohammadi - Discover Nano, 2023 - Springer
This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a
triple metal gate (VTG-TFET). We obtained improved switching characteristics for the …
triple metal gate (VTG-TFET). We obtained improved switching characteristics for the …