Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Gallium nitride-based complementary logic integrated circuits
Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
technology is the current driving force of the integrated circuit industry. Silicon's narrow …
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-
dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D …
dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide …
Bulk trapping and its effects on threshold voltage hysteresis (ΔV TH) in Al 2 O 3/AlGaN/GaN
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
TE Hsieh, EY Chang, YZ Song, YC Lin… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold
voltage hysteresis using Al 2 O 3/AlN stack gate insulator is presented. The trapping effect of …
voltage hysteresis using Al 2 O 3/AlN stack gate insulator is presented. The trapping effect of …