We report, for the first time, the fabrication of single-crystal In2Se3 thin layers using
mechanical exfoliation and studies of crystalline–crystalline (α→ β) phase transformations …

The dielectric constant or relative permittivity (εr) of a dielectric material, which describes
how the net electric field in the medium is reduced with respect to the external field, is a …

The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-
In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with …

Crystal growth, characterization, and sensing application of In 2 S 3 and Ga 2 S 3 are
demonstrated herein. Single crystals of In 2 S 3 and Ga 2 S 3 were grown by chemical vapor …

In 2 Se 3 has potential as a phase-change material for memory applications. Understanding
its phase diagram is important to achieve controlled switching between phases. Using x-ray …

We show that the amorphization process in phase-change In2Se3 nanowires grown by
chemical vapor deposition can be driven by electronic effects and does not require the …

Microphase separation of a polyisoprene-b-polystyrene-b-polyferrocenylsilane (PI-b-PS-b-
PFS) triblock terpolymer film during chloroform solvent-annealing formed a 44 nm period …

Abstract Polycrystalline In 4 Se 3: Sn thin films are prepared on glass substrate by reactive
evaporation under a vacuum of 10− 5 mbar. The characterizations of the samples are done …

We report the observation of the generation of dislocations in single-crystal phase-change In
2 Se 3 nanowires under electrical pulses and the impact of these dislocations on electrical …

The phase transition of Bi-doped (∼ 3 at.%) GeTe nanowires from a rhombohedral (R) to a
face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction …