Investigations on the recovery of the electrical properties of Smart Cut™-transferred SiC thin film using SiC-on-Insulator structures
G Gelineau, C Masante, E Rolland, S Barbet… - Materials Science …, 2024 - Trans Tech Publ
SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of
great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by …
great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by …
Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
A Drouin, RB Simon, D Radisson… - Materials Science …, 2024 - Trans Tech Publ
Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level
Device Performance Optimization Page 1 Application of Advanced Characterization …
Device Performance Optimization Page 1 Application of Advanced Characterization …
Wide bandgap material transfer as a flagship technology for future high power devices
Today's environmental requirements for energy efficiency call for better management of
electrical energy with minimum leakage at all levels: from DC phone chargers to power …
electrical energy with minimum leakage at all levels: from DC phone chargers to power …
Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications
S Huet, S Guerber, E Rolland, B Szelag… - Materials Science …, 2024 - Trans Tech Publ
Silicon-carbide-on-insulator (SiCOI) is a promising platform for photonic integrated circuits.
However, the development of this new photonic platform is hindered by the lack of high …
However, the development of this new photonic platform is hindered by the lack of high …