The local-density approximation (LDA) together with the half occupation (transition state) is
notoriously successful in the calculation of atomic ionization potentials. When it comes to …

We present a comparative full-potential study of generalized Kohn-Sham (gKS) schemes
with explicit focus on their suitability as starting point for the solution of the quasiparticle …

The origin of the almost unique combination of optical transparency and the ability to bipolar
dope tin monoxide is explained using a combination of soft and hard X-ray photoemission …

We present an atomic-orbital-based approximate scheme for self-interaction correction (SIC)
to the local-density approximation (LDA) of density-functional theory. The method, based on …

We present most recent developments to calculate the electronic states of semiconductors
and insulators without taking into account experimental parameters. They are based on the …

Indium nitride (InN) has been of significant interest for creating and studying two-
dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in …

The influence of dislocations on electron transport properties of undoped InN thin films
grown by molecular-beam epitaxy on AlN (0001) pseudosubstrates is reported. The …

The surfaces of In-and N-polarity InN grown by molecular-beam epitaxy have been
investigated using core-level and valence band x-ray photoemission spectroscopy (XPS) …

Core-level and valence band spectra of In x Ga 1− x N films were measured using hard x-ray
photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the …

Surface morphology of thick In x Ga1–x N (x∼ 0.14) epilayers mediated by growth
interruption was investigated. The interruption was performed by changing the turn-off time …