GaN films have been deposited by radio frequency sputtering of a GaAs target with pure
nitrogen. The growth, composition, and structure of the films deposited on quartz substrates …

Los dispositivos fotovoltaicos son utilizados para la provisión de energía eléctrica de los
satélites, siendo¡ as celdas solares el principal componente de dicho sistema. Uno de los …

The effects of ex situ annealing in N ambient and in situ annealing in As ambient on
GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low …

The effects of gamma-ray irradiation on the structural properties of GaAs 1− x N x films (N
concentration= 1.9 and 5.1 at%) grown by metal organic vapor phase epitaxy on GaAs (001) …

One of today's most important challenges is discovering how to obtain clean, eco-friendly
and renewable energy since the majority of the world's population is using fossil fuels that …

Hetero-epitaxy of GaAs films on Ge were grown by the chemical beam epitaxy (CBE)
technique for super-high-efficiency multi-junction solar cells. However, the growth of III-V on …

Over the last few years, ternary and quaternary semiconductor compounds containing (Ga,
In) and (N, As) elements become subject of many studies. Both, indium and nitrogen, lowers …

Recently, intensive experimental and theoretical efforts have been directed towards the
understanding of the properties of group III-V alloys in which the group V element is partially …