In chemical mechanical polishing (CMP) process, surface defects and contamination will be
introduced on the wafer surface due to interfacial chemical reactions and abrasive particles …

It is a challenge to enhance the material removal rate (MRR) during the chemical
mechanical polishing (CMP) of silicon wafers, with increasing the size of a wafer and …

The effects of three different types of surfactants, including cationic surfactant
cetyltrimethylammonium bromide (CTAB), anionic surfactant sodium dodecyl benzene …

Surfactants, especially non-ionic surfactants, play an important role in the preparation of
nanocarriers and can also promote the enzymatic hydrolysis of lignocellulose. A broad …

β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential
applications in high-power devices, such as high-performance field-effect transistors. For …

As a wide band gap semiconductor, gallium nitride (GaN) is widely used in kinds of
electronic devices. With the improvement of device accuracy, the requirements for GaN …

The practical application of current photocatalytic-assisted chemical mechanical polishing
(PCMP) technology still faces some challenges and difficulties, such as complex preparation …

The improvement of polishing rate during chemical mechanical polishing of GaN materials
has been a research hotspot. Efficient and inexpensive catalysts are important for large …

Polished sapphire has been widely used because of its superior mechanical and physical
characteristics. However, the polishing process of sapphire is still unclear and the …

Molecular dynamics simulation examines how the polishing tool's rotating velocity and axes
affect surface nanotribological properties and material removal mechanism of patterned …