Power optimized SRAM cell with high radiation hardened for aerospace applications
The SRAM cells suffer from soft errors under high radiation environment like aerospace and
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T …
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
E Abbasian, M Gholipour - Journal of Computational Electronics, 2020 - Springer
Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …
short-channel effects in nanoscale devices. However, with continuous technology scaling …
Design and statistical analysis of low power and high speed 10T static random access memory cell
Static random access memory (SRAM)‐based cache memory is an essential part of
electronic devices. As the technology node reduces, the power loss and stability has …
electronic devices. As the technology node reduces, the power loss and stability has …
Low power and write-enhancement RHBD 12T SRAM cell for aerospace applications
In aerospace applications, the conventional Static Random Access Memories (SRAMs) are
facing high soft error problems like a single event upset. Several radiation-hardened based …
facing high soft error problems like a single event upset. Several radiation-hardened based …
Design of novel SRAM cell using hybrid VLSI techniques for low leakage and high speed in embedded memories
K Gavaskar, US Ragupathy, V Malini - Wireless Personal Communications, 2019 - Springer
Static or leakage power is the dominating component of total power dissipation in deep
nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm …
nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm …
[HTML][HTML] SRAM cell leakage control techniques for ultra low power application: a survey
P Bikki, P Karuppanan - Circuits and systems, 2017 - scirp.org
Low power supply operation with leakage power reduction is the prime concern in modern
nano-scale CMOS memory devices. In the present scenario, low leakage memory …
nano-scale CMOS memory devices. In the present scenario, low leakage memory …
High stable and low power 10T CNTFET SRAM cell
M Elangovan, K Gunavathi - Journal of Circuits, Systems and …, 2020 - World Scientific
The ultimate aim of a memory designer is to design a memory cell which could consume low
power with high data stability in the deep nanoscale range. The implementation of Very …
power with high data stability in the deep nanoscale range. The implementation of Very …
A low power single bit-line configuration dependent 7T SRAM bit cell with process-variation-tolerant enhanced read performance
Cache memory is a key component for most microprocessors in embedded system. The
increasing processing load has resulted in an upsurge in the demand for low power, high …
increasing processing load has resulted in an upsurge in the demand for low power, high …
Low leakage 10T SRAM cell with improved data stability in deep sub-micron technologies
R Krishna, P Duraiswamy - Analog Integrated Circuits and Signal …, 2021 - Springer
SRAMs are extensively used in system-on-chip designs. Embedded SRAMs occupy majority
of the die area leading to increased power consumption. Although the performance of SRAM …
of the die area leading to increased power consumption. Although the performance of SRAM …
Statistical stability characterization of schmitt trigger based 10-t sram cell design
A Sachdeva, VK Tomar - 2020 7th international conference on …, 2020 - ieeexplore.ieee.org
In this paper, stability analysis of conventional 6-T SRAM cell and Schmitt trigger (ST) based
10-T SRAM cell with optimized sizing parameters has been performed and compared. The …
10-T SRAM cell with optimized sizing parameters has been performed and compared. The …