As a key structural parameter, phase depicts the arrangement of atoms in materials.
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

Indium oxide (InO x) thin films have attractive carrier transport properties for oxide
semiconductors because of the large isotropic 5 s orbital overlap. In this study, InO x films …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

Ultrathin single-nm channels of transparent metal oxides offer unparalleled opportunities for
boosting the performance of low power, multifunctional thin-film electronics. Here we report …