Recent progress on phase engineering of nanomaterials
As a key structural parameter, phase depicts the arrangement of atoms in materials.
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …
Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
HM Kim, DG Kim, YS Kim, M Kim… - International Journal of …, 2023 - iopscience.iop.org
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …
semiconductors has grown. They offer high mobility, low off-current, low process …
extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
[HTML][HTML] Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
[HTML][HTML] Wide bandgap semiconductor-based integrated circuits
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …
traditional semiconductors such as silicon, rendering them very promising for applications in …
Selectively nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability
DG Kim, H Choi, YS Kim, DH Lee, HJ Oh… - … Applied Materials & …, 2023 - ACS Publications
Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …
Structural, Optical, and Electrical Properties of InOx Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications
TH Hong, KR Kim, SH Choi, SH Lee… - ACS Applied …, 2022 - ACS Publications
Indium oxide (InO x) thin films have attractive carrier transport properties for oxide
semiconductors because of the large isotropic 5 s orbital overlap. In this study, InO x films …
semiconductors because of the large isotropic 5 s orbital overlap. In this study, InO x films …
Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor
TH Hong, HJ Jeong, HM Lee, SH Choi… - … Applied Materials & …, 2021 - ACS Publications
Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …
thickness and metal composition of oxide semiconductors, making them attractive materials …
2D transistors rapidly printed from the crystalline oxide skin of molten indium
Ultrathin single-nm channels of transparent metal oxides offer unparalleled opportunities for
boosting the performance of low power, multifunctional thin-film electronics. Here we report …
boosting the performance of low power, multifunctional thin-film electronics. Here we report …