III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

In this study, we investigated the relationship of light output power with the optical thickness
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …

AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small
size, DC driving, no environmental contamination etc., and they are now emerging as the …

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to
show improved carrier injection into the multi-quantum well region. The structures of …

In this study, we investigate a unique Al-content engineered superlattice electron blocking
layer (AESL-EBL) for improving the charge carrier transport properties of AlGaN quantum …

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron
overflow and insufficient hole injection. In this paper, novel DUV LED structures with …

The performance of AlGaN-based mid and deep ultraviolet light emitting diodes (LEDs) is
severely limited by electron overflow and by the poor hole injection into the device active …

In this study, five AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) with
different electron blocking layer (EBL) and hole blocking layer (HBL) have been investigated …