When flexible organic field‐effect transistors meet biomimetics: a prospective view of the internet of things
The emergence of flexible organic electronics that span the fields of physics and
biomimetics creates the possibility for increasingly simple and intelligent products for use in …
biomimetics creates the possibility for increasingly simple and intelligent products for use in …
Recent progress in organic phototransistors: Semiconductor materials, device structures and optoelectronic applications
Phototransistors combine light detection and signal amplification functions into a single
device and are regarded as one of the most important components for optoelectronic …
device and are regarded as one of the most important components for optoelectronic …
Ultrathin and Ultrasensitive Direct X‐ray Detector Based on Heterojunction Phototransistors
Most contemporary X‐ray detectors adopt device structures with non/low‐gain energy
conversion, such that a fairly thick X‐ray photoconductor or scintillator is required to …
conversion, such that a fairly thick X‐ray photoconductor or scintillator is required to …
[HTML][HTML] Highly responsive blue light sensor with amorphous indium-zinc-oxide thin-film transistor based architecture
A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor
(TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely …
(TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely …
Oxide thin-film transistors with IMO and IGZO stacked active layers for UV detection
H Lu, X Zhou, T Liang, L Zhang… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
Thin film transistors (TFTs) with amorphous InMgO (a-IMO) and InGaZnO (a-IGZO) stacked
active layers are proposed to implement high-performance ultraviolet (UV) detectors. In this …
active layers are proposed to implement high-performance ultraviolet (UV) detectors. In this …
[HTML][HTML] A Review of Optical Sensors in CMOS
R Gounella, GM Ferreira, MLM Amorim, JN Soares Jr… - Electronics, 2024 - mdpi.com
This paper presents an overview of silicon-based optical sensors for the measurement of
light in the visible spectrum range. The review is focused on sensors based on CMOS …
light in the visible spectrum range. The review is focused on sensors based on CMOS …
Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration
In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs)
in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits …
in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits …
Integration of Ni2Si/Si Nanograss Heterojunction on n-MOSFET to Realize High-Sensitivity Phototransistors
We report a top-down fabrication technique for direct integration of Ni 2 Si/Si heterojunction
arrays on n-type MOSFET gate terminal to realize sensitive field-effect phototransistors …
arrays on n-type MOSFET gate terminal to realize sensitive field-effect phototransistors …
Nanobridge gate-all-around phototransistors for electro-optical OR gate circuit and frequency doubler applications
J Yong Oh, M Saif Islam - Applied Physics Letters, 2014 - pubs.aip.org
We fabricated photosensitive silicon-nanobridge 3-D field-effect-transistors and
demonstrated their analog and digital applications. The channels of the transistors were …
demonstrated their analog and digital applications. The channels of the transistors were …
Three-dimensional radial-junction ZnO nanowire/a-Si: H core–shell infrared photodiodes
BC Iheanacho, A Tari, WS Wong - Nanotechnology, 2020 - iopscience.iop.org
Hydrogenated amorphous silicon (a-Si: H)-based infrared photodiodes were fabricated by
coating a-Si: H thin-film pin layers over hydrothermally-synthesized disordered zinc oxide …
coating a-Si: H thin-film pin layers over hydrothermally-synthesized disordered zinc oxide …