The emergence of flexible organic electronics that span the fields of physics and
biomimetics creates the possibility for increasingly simple and intelligent products for use in …

Phototransistors combine light detection and signal amplification functions into a single
device and are regarded as one of the most important components for optoelectronic …

Most contemporary X‐ray detectors adopt device structures with non/low‐gain energy
conversion, such that a fairly thick X‐ray photoconductor or scintillator is required to …

A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor
(TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely …

Thin film transistors (TFTs) with amorphous InMgO (a-IMO) and InGaZnO (a-IGZO) stacked
active layers are proposed to implement high-performance ultraviolet (UV) detectors. In this …

This paper presents an overview of silicon-based optical sensors for the measurement of
light in the visible spectrum range. The review is focused on sensors based on CMOS …

In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs)
in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits …

We report a top-down fabrication technique for direct integration of Ni 2 Si/Si heterojunction
arrays on n-type MOSFET gate terminal to realize sensitive field-effect phototransistors …

We fabricated photosensitive silicon-nanobridge 3-D field-effect-transistors and
demonstrated their analog and digital applications. The channels of the transistors were …

Hydrogenated amorphous silicon (a-Si: H)-based infrared photodiodes were fabricated by
coating a-Si: H thin-film pin layers over hydrothermally-synthesized disordered zinc oxide …