Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs
M Balasubbareddy, K Sivasankaran - IEEE Access, 2024 - ieeexplore.ieee.org
The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic
performance with its increased effective channel width. However, as the technology node …
performance with its increased effective channel width. However, as the technology node …
Performance analysis of geometric variations in circular double gate MOSFETs at sub-7nm technology nodes
Abstract Circular Double Gate Transistors (CDGTs) is one of the alternative layout-based
solutions to mitigate the short-channel effects with superior electrostatic controllability. In this …
solutions to mitigate the short-channel effects with superior electrostatic controllability. In this …
Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs
S Rai, R Sharma, R Saha, B Bhowmick… - Physica …, 2024 - iopscience.iop.org
In this work, the trap sensitivity of single material gate (SMG) and dual material gate (DMG)
nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap …
nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap …