[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Liquid-metal-printed ultrathin oxides for atomically smooth 2D material heterostructures
Two-dimensional (2D) semiconductors are promising channel materials for continued
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …
Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices
Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …
Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices
In this study, multilevel switching at low-power in Ti/TiN/Ga 2 O 3/Ti/Pt resistive random-
access memory (RRAM) devices has been systematically studied. The fabricated RRAM …
access memory (RRAM) devices has been systematically studied. The fabricated RRAM …
Enhanced ultrathin ultraviolet detector based on a diamond metasurface and aluminum reflector
Metasurface is a kind of sub-wavelength artificial electromagnetic structure, which can
resonate with the electric field and magnetic field of the incident light, promote the interaction …
resonate with the electric field and magnetic field of the incident light, promote the interaction …
Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
K Xing, P Aukarasereenont, S Rubanov… - ACS Applied …, 2022 - ACS Publications
The p-type surface conductivity of hydrogen-terminated diamond (H-diamond) provides a
viable approach toward diamond-based wide-bandgap metal-oxide-semiconductor field …
viable approach toward diamond-based wide-bandgap metal-oxide-semiconductor field …
Growth of α-and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD
F Egyenes-Pörsök, F Gucmann… - Semiconductor …, 2020 - iopscience.iop.org
Abstract Ga 2 O 3, a wide-bandgap semiconductor material, offers a great potential for
power and high-voltage electronic devices. We report on the growth of undoped α-and β …
power and high-voltage electronic devices. We report on the growth of undoped α-and β …
AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface
The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
We demonstrate the characteristics of a conductive-bridging random access memory
(CBRAM) with Cu/TiW/InGaZnO/Ga 2 O 3/Pt stack structure. The addition of a thin metal …
(CBRAM) with Cu/TiW/InGaZnO/Ga 2 O 3/Pt stack structure. The addition of a thin metal …
Highly Sensitive Ga2O3-Face Tunnel Field Effect Phototransistor for Deep UV Detection
In this article, a Technology Computer-Aided Design (TCAD)-based study has been done for
gallium oxide (Ga 2 O 3) gated UV phototransistor with face tunneling architecture and …
gallium oxide (Ga 2 O 3) gated UV phototransistor with face tunneling architecture and …