DC-DC converter topologies for electric vehicles, plug-in hybrid electric vehicles and fast charging stations: State of the art and future trends
This article reviews the design and evaluation of different DC-DC converter topologies for
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …
Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Cu-Cu joining using citrate coated ultra-small nano-silver pastes
S Zhang, Q Wang, T Lin, P Zhang, P He… - Journal of Manufacturing …, 2021 - Elsevier
In this study, ultra-small nano-Ag particles with an average diameter of 4.76 nm and
excellent stability have been synthesized on a large scale to meet low-temperature, low …
excellent stability have been synthesized on a large scale to meet low-temperature, low …
Review of wide band-gap technology: power device, gate driver, and converter design
This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material
level to system level. The properties of semiconductor materials, ie, silicon carbide and …
level to system level. The properties of semiconductor materials, ie, silicon carbide and …
A resonant gate driver for silicon carbide MOSFETs
J Zhang, H Wu, J Zhao, Y Zhang, Y Zhu - IEEE Access, 2018 - ieeexplore.ieee.org
In this paper, a resonant gate driver for silicon carbide power MOSFET is proposed. This
resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The …
resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The …
An integrated gate driver based on SiC MOSFETs adaptive multi-level control technique
J Cao, ZK Zhou, Y Shi, B Zhang - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …
widely used for its small parasitic characteristics and fast switching speed. Using discrete …
Single-Switch Discontinuous Current Source Gate Driver with Voltage Boosting Capability and No Current Diversion
S Zare, H Farzanehfard - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
This article presents a novel single-switch discontinuous current-source gate driver (CSD)
with voltage boosting capability appropriate for ultralow voltage applications. The power …
with voltage boosting capability appropriate for ultralow voltage applications. The power …
Partial-bootstrap gate driver for switching loss reduction and crosstalk mitigation
This letter presents a partial-bootstrap gate driver circuit for switching loss reduction and
crosstalk mitigation. The proposed circuit is simple and no additional power supply or control …
crosstalk mitigation. The proposed circuit is simple and no additional power supply or control …
Ultrafast gate driver with GaN HEMTs for ns-pulse generator using SiC MOSFET
Shorter voltage and current rise/fall time are the main driving forces for nanosecond pulse
power technology. The switching capabilities of SiC-MOSFET directly determine the …
power technology. The switching capabilities of SiC-MOSFET directly determine the …