DC-DC converter topologies for electric vehicles, plug-in hybrid electric vehicles and fast charging stations: State of the art and future trends

S Chakraborty, HN Vu, MM Hasan, DD Tran… - Energies, 2019 - mdpi.com
This article reviews the design and evaluation of different DC-DC converter topologies for
Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design …

Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

A review of switching slew rate control for silicon carbide devices using active gate drivers

S Zhao, X Zhao, Y Wei, Y Zhao… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

Cu-Cu joining using citrate coated ultra-small nano-silver pastes

S Zhang, Q Wang, T Lin, P Zhang, P He… - Journal of Manufacturing …, 2021 - Elsevier
In this study, ultra-small nano-Ag particles with an average diameter of 4.76 nm and
excellent stability have been synthesized on a large scale to meet low-temperature, low …

Review of wide band-gap technology: power device, gate driver, and converter design

K Ravinchandra, TKS Freddy, JS Lee, KB Lee… - Journal of Power …, 2022 - Springer
This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material
level to system level. The properties of semiconductor materials, ie, silicon carbide and …

A resonant gate driver for silicon carbide MOSFETs

J Zhang, H Wu, J Zhao, Y Zhang, Y Zhu - IEEE Access, 2018 - ieeexplore.ieee.org
In this paper, a resonant gate driver for silicon carbide power MOSFET is proposed. This
resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The …

An integrated gate driver based on SiC MOSFETs adaptive multi-level control technique

J Cao, ZK Zhou, Y Shi, B Zhang - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
In HV (high-voltage) and HF (high-frequency) applications, SiC (silicon carbide) MOSFET is
widely used for its small parasitic characteristics and fast switching speed. Using discrete …

Single-Switch Discontinuous Current Source Gate Driver with Voltage Boosting Capability and No Current Diversion

S Zare, H Farzanehfard - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
This article presents a novel single-switch discontinuous current-source gate driver (CSD)
with voltage boosting capability appropriate for ultralow voltage applications. The power …

Partial-bootstrap gate driver for switching loss reduction and crosstalk mitigation

C Qian, Z Wang, G Xin, X Shi - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
This letter presents a partial-bootstrap gate driver circuit for switching loss reduction and
crosstalk mitigation. The proposed circuit is simple and no additional power supply or control …

Ultrafast gate driver with GaN HEMTs for ns-pulse generator using SiC MOSFET

J Ma, L Yu, L Ren, W Xu, J Ma… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Shorter voltage and current rise/fall time are the main driving forces for nanosecond pulse
power technology. The switching capabilities of SiC-MOSFET directly determine the …