Low power design for future wearable and implantable devices
With the fast progress in miniaturization of sensors and advances in micromachinery
systems, a gate has been opened to the researchers to develop extremely small …
systems, a gate has been opened to the researchers to develop extremely small …
A survey of test and reliability solutions for magnetic random access memories
Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a
significant part of system power consumption. Though widely used, nonvolatile Flash …
significant part of system power consumption. Though widely used, nonvolatile Flash …
Improving write performance for STT-MRAM
Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising
emerging memory technology because of its various advantageous features such as …
emerging memory technology because of its various advantageous features such as …
Cost-efficient self-terminated write driver for spin-transfer-torque RAM and logic
A cost-efficient self-terminated write driver is proposed for low-energy RAM and logic circuits
by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a …
by using spin-transfer-torque (STT)-magnetic tunnel junction (MTJ) devices. Since a …
STT-RAM energy reduction using self-referenced differential write termination technique
H Farkhani, M Tohidi, A Peiravi… - … Transactions on Very …, 2016 - ieeexplore.ieee.org
Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive
candidate for future nonvolatile memories. It advantages the benefits of current state-of-the …
candidate for future nonvolatile memories. It advantages the benefits of current state-of-the …
A low-power high-speed spintronics-based neuromorphic computing system using real-time tracking method
In spintronic-based neuromorphic computing systems (NCSs), the switching of magnetic
moment in a magnetic tunnel junction (MTJ) is used to mimic neuron firing. However, the …
moment in a magnetic tunnel junction (MTJ) is used to mimic neuron firing. However, the …
Novel boosted-voltage sensing scheme for variation-resilient STT-MRAM read
This paper proposes a novel boosted voltage sensing (BVS) scheme that substantially
improves the resiliency of STT-MRAMs against variations in read accesses based on bitline …
improves the resiliency of STT-MRAMs against variations in read accesses based on bitline …
Progressive scaled STT-RAM for approximate computing in multimedia applications
Spintronic memories are one of the most promising candidates as a universal memory.
Although they offer superior energy efficiency over the conventional memories, benefiting …
Although they offer superior energy efficiency over the conventional memories, benefiting …
Analysis of row hammer attack on sttram
In this paper, we model and investigate the impact of Row Hammering (RH) on Spin-
Transfer Torque RAM (STTRAM) by exploiting its write operation. STTRAM suffers from high …
Transfer Torque RAM (STTRAM) by exploiting its write operation. STTRAM suffers from high …
A cross-layer adaptive approach for performance and power optimization in STT-MRAM
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising
candidate as a universal on-chip memory technology due to non-volatility, high density and …
candidate as a universal on-chip memory technology due to non-volatility, high density and …