Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering
Abstract In situ thermal annealing (673-1273 K) during X-ray diffraction synchrotron
measurements was performed to monitor the strain level as a proxy to follow the recovery of …
measurements was performed to monitor the strain level as a proxy to follow the recovery of …
[HTML][HTML] Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
Strain engineering using ion beams is a current topic of research interest in semiconductor
materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain …
materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain …
GaAs a model system to study the role of electron–phonon coupling on ionization stimulated damage recovery
A Chakravorty, C Dufour, A Mishra… - Journal of Physics D …, 2022 - iopscience.iop.org
The latent ion tracks observed in various materials after swift heavy ion (SHI) irradiation is
often explained in the framework of thermal spike model (TSM). Dominantly, SHIs deposit …
often explained in the framework of thermal spike model (TSM). Dominantly, SHIs deposit …