Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
An optical modulator integrated on silicon is a key enabler for high-performance optical
interconnects,,,,,. However, Si-based optical modulators suffer from low phase-modulation …
interconnects,,,,,. However, Si-based optical modulators suffer from low phase-modulation …
III–V/Si hybrid MOS optical phase shifter for Si photonic integrated circuits
We present a novel optical phase modulation scheme on a Si photonic platform that uses a
III–V/Si hybrid metal–oxide–semiconductor (MOS) capacitor formed by bonding an n-type …
III–V/Si hybrid metal–oxide–semiconductor (MOS) capacitor formed by bonding an n-type …
Ultra-power-efficient 2× 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter
We have demonstrated an ultra-power-efficient 2× 2 Si Mach–Zehnder interferometer optical
switch with III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifters. The efficient low …
switch with III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifters. The efficient low …
Promoting the photocatalytic activity of Bi 4 Ti 3 O 12 microspheres by incorporating iron
Z Liu, Z Ma - RSC advances, 2020 - pubs.rsc.org
Small amounts of Fe (NO3) 3 were added to the synthesis mixture prior to the hydrothermal
synthesis of Bi4Ti3O12 microspheres. The physicochemical properties of the resulting …
synthesis of Bi4Ti3O12 microspheres. The physicochemical properties of the resulting …
Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance
In this work, we numerically and experimentally examined the impact of parasitic
capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor …
capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor …
High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications
Low-intensity light detection necessitates high-responsivity photodetectors. To achieve this,
we report In_0. 53Ga_0. 47As/InAs/In_0. 53Ga_0. 47As quantum well (InAs QW) photo-field …
we report In_0. 53Ga_0. 47As/InAs/In_0. 53Ga_0. 47As quantum well (InAs QW) photo-field …
Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog …
A charge trap device based on field-effect transistors (FET) is a promising candidate for
artificial synapses because of its high reliability and mature fabrication technology. However …
artificial synapses because of its high reliability and mature fabrication technology. However …
Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform
The heterogeneous integration of SiGe, Ge, and III-V semiconductors on Si provides many
opportunities to develop high-performance photonic integrated circuits through …
opportunities to develop high-performance photonic integrated circuits through …
Octahedral distortion and oxygen vacancies induced band-gap narrowing and enhanced visible light absorption of Co/Fe co-doped Bi3. 25Nd0. 75Ti3O12 …
Reducing bandgap energy in ferroelectric materials has become an important commitment
to improve the performance of the photovoltaic solar cell. This study reports the effect of the …
to improve the performance of the photovoltaic solar cell. This study reports the effect of the …
Influence of transition metal doping (X= Mn, Fe, Co, Ni) on the structure and bandgap of ferroelectric Bi3. 15Nd0. 85Ti2X1O12
X Chen, F Huang, Z Lu, Y Xue, J Min, J Li… - Journal of Physics D …, 2017 - iopscience.iop.org
Although the internal field can effectively maintain the separation between photo-excited
charge carriers, the wide bandgap restrains ferroelectric materials from visible light …
charge carriers, the wide bandgap restrains ferroelectric materials from visible light …