A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
GNRFET-and CNTFET-based designs of highly efficient 22 T unbalanced single-trit ternary multiplier cell
E Abbasian, A Aminzadeh… - Arabian Journal for …, 2023 - Springer
The internet-of-things and mobile devices have emerged as significant drivers in enhancing
the living standards. As such devices rely on batteries, energy and area efficiency are top …
the living standards. As such devices rely on batteries, energy and area efficiency are top …
An efficient GNRFET-based circuit design of ternary half-adder
E Abbasian, M Orouji, ST Anvari - AEU-International Journal of Electronics …, 2023 - Elsevier
Attaining low energy consumption in digital circuits design is a main task for designers
because emerging applications are based on batteries and face limited-energy. Designing …
because emerging applications are based on batteries and face limited-energy. Designing …
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour - Microelectronics Journal, 2022 - Elsevier
This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla - Arabian Journal for Science and …, 2022 - Springer
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology
E Abbasian, M Orouji… - … Journal of Circuit …, 2023 - Wiley Online Library
Summary Internet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications
E Abbasian, M Gholipour - AEU-International Journal of Electronics and …, 2021 - Elsevier
The internet of things (IoTs)-based systems require battery-enabled energy-efficient memory
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
Design of ternary logic circuits using GNRFET and RRAM
SJ Basha, P Venkatramana - Circuits, Systems, and Signal Processing, 2023 - Springer
In this paper, the designs of ternary digital circuits are discussed. The ternary logic is a better
choice over conventional logics due its extraordinary offers such as high operating speed …
choice over conventional logics due its extraordinary offers such as high operating speed …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour… - Circuits, Systems, and …, 2022 - Springer
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
A stable low leakage power SRAM with built-in read/write-assist scheme using GNRFETs for IoT applications
E Abbasian, T Mirzaei… - ECS Journal of Solid State …, 2022 - iopscience.iop.org
Abstract Design of circuits using graphene nanoribbon field-effect transistors (GNRFETs), as
promising next-generation devices, can improve total performance of a chip due to offering …
promising next-generation devices, can improve total performance of a chip due to offering …