Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
An AlGaN core–shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band
To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV)
spectral range exhibit very low efficiency due to the presence of large densities of defects …
spectral range exhibit very low efficiency due to the presence of large densities of defects …
High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes
AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …
alternative technology to replace mercury lamps for water purification and disinfection. At …
High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance
JR Grandusky, SR Gibb, MC Mendrick… - Applied physics …, 2011 - iopscience.iop.org
This letter reports on the improved performance of a pseudomorphic ultraviolet light-emitting
diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a …
diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a …
AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics
Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …
MicroLED/LED electro-optical integration techniques for non-display applications
V Kumar, I Kymissis - Applied Physics Reviews, 2023 - pubs.aip.org
MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low
cost, and long lifetime. These characteristics are highly desirable in various applications, but …
cost, and long lifetime. These characteristics are highly desirable in various applications, but …
[HTML][HTML] Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs)
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency
There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …